Local strain relaxation in Si0.7Ge0.3 on Si„001... induced by Ga 1 irradiation

نویسندگان

  • Chinkyo Kim
  • I. K. Robinson
  • J. E. Greene
چکیده

A strained pseudomorphic Si0.7Ge0.3 film grown by gas-source molecular-beam epitaxy on Si~001! was irradiated at room temperature with 25 keV Ga ions. The gradual strain relaxation of the metastable Si0.7Ge0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model was successfully applied to explain the shifting and broadening of the additional diffuse scattering. © 1998 American Institute of Physics. @S0021-8979~98!05912-X#

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تاریخ انتشار 1998